super fast recovery diode rf081l2s ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)small power mold type. pmds ? structure 2)low switching loss 3)low forward voltage ? construction silicon epitaxial planer ? absolute maximum ratings (ti=25 ?c) symbol limits unit v rm 200 v v r 200 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit v f 0.85 0.98 v i r 0.01 10 a trr 12 25 ns thermal resistance rth(j-l) 23 c/w 1.1 a 25 a d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave tl=120c junction to lead reverse recovery time reverse current i f =1.1a v r =200v i f =0.5a,i r =1a,irr=0.25i r forward voltage conditions parameter storage temperature junction temperature forward current surge peak i fsm 60hz half sin wave, non-repetitive one cycle peak value, tj=25c average rectified forward current io reverse voltage repetitive peak reverse voltage ? taping dimensions (unit : mm) parameter conditions pmds 2.0 4.2 2.0 rohm : pmds jedec : sod-106 6 6 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 6 5 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max manufacture date 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf081l2s 1 10 100 0 5 10 15 20 25 30 f=1mhz 0.01 0.1 1 10 0 300 600 900 1200 1500 forward voltage v f (mv) v f - i f characteristics forward current : i f (a) tj=150 c tj=25 c tj=125 c tj=75 c 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 180 200 tj=150 c reverse current : i r (na) reverse voltage v r (v) v r - i r characteristics tj=125 c tj=25 c tj=75 c capacitance between terminals:ct(pf) reverse voltage : v r (v) v r - ct characteristics 700 750 800 850 900 950 1000 v f dispersion map forward voltage : v f (mv) ave:829mv i f =1.1a 1 10 100 ta=25 c v r =200v n=20pcs reverse current : i r (na) i r dispersion map ave:11.7na 30 35 40 45 50 55 60 ave:51.0pf f=1mhz v r =0v capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf081l2s 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k c=200pf r=0 ave:12.0kv 0 20 40 60 80 100 ave:74.5a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current : i fsm (a) 0 5 10 15 20 25 30 ave:13.1ns i f =0.5a i r =1a irr=0.25 i r trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current : i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1000 1 10 100 t i fsm peak surge forward current : i fsm (a) time:t(ms) i fsm - t characteristics electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - l) rth(j - a) on glass - epoxy substrate soldering land 10mm rth(j - a) on glass - epoxy substrate soldering land 2mm time:t(s) rth - t characteristics transient thermal impedance:rth ( c/w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf081l2s 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.5 1 1.5 2 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) ambient temperature:ta( c ) derating curve (io - ta) t tj=150 c d=t/t t v r io v r =160v 0a 0v on glass - epoxy substrate soldering land 2mm 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c ) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =160v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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